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For the devices with acid-cleaned β-Ga2O3, commercially available unintentionally doped β-Ga2O3 (−201) substrates with the nominal ND = 7.8 × 1017 cm−3 (Novel Crystal Technology Inc.) were immersed in an acidic solution (water: 30 to 35.5%; H2O2: 95%; H2SO4 = 1:1:4) for 5 min, followed by rinsing in water for 15 min.
Copyright and License information: ©2019-10-18
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