Thin Film Deposition

The thin film preparation method can be divided into vapor deposition and phase deposition according to the phase of the material used. The phase deposition includes spin-coating and inkjet printing processes mentioned later. In contrast, the vapor deposition depends on whether the deposition process contains the chemical reaction process divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD).

PVD is to depositions or atoms generated by physical methods on a substrate under vacuum conditions to form a thin film, which generally used to prepare electrodes or active metal layers [141, 142]. Common deposition methods include vacuum evaporation, vacuum sputtering, and ion plating. Among them, the metal target ion sputtering refers to the vacuum container, under the action of high voltage 1500 V, the remaining gas molecules are ionized to form plasma, and the cations bombard the metal target under the acceleration of the electric field, causing the metal atoms to sputter on the surface of the sample to form conductive film [143]. Ahmed et al. [144] introduced a Si-temperature sensor based on a flexible PI substrate. They deposited undoped amorphous silicon as a sensing material between metal electrodes formed by radio frequency magnetron sputtering and packaged them. Finally, the temperature sensing element is embedded in the flexible polyimide film, and the sensing performance is not affected. The maximum TCR at 30 °C is 0.0288K-1. Webb et al. [145] introduced two ultra-thin, skin-like sensor fabricating methods that are self-assembled on the skin surface in the form of an array to provide clear and accurate thermal performance monitoring. A structure is composed of a temperature sensor array, the sensitive layer formed by the serpentine trace structure of the Cr/Au layer deposited on the PI film by the metal evaporation deposition method, the microlithography technology, and the wet etching technology, and the reactive ion etching and metal deposition for contacts and interconnections complete the array. Another sensor structure uses multiplexed addressing to form a patterned PIN diode sensor design of doped Si nano-film. The sensitivity layer is defined by metal evaporation, photolithography, chemical vapor deposition, and wet etching steps. The two arrays are shown in Fig. 6a. Aluminum phthalocyanine chloride (AlPcCl) is often used as a material for solar cells and humidity sensors. Under the study development of Chani et al. [146] AlPcCl is used as a thermistor and deposited on an aluminum electrode on a glass substrate using a vacuum thermal evaporator. The authors found that the AlPcCl film has a higher sensitivity to the temperature at 25–80 °C, and annealing can improve sensing performance. In a flexible temperature sensor developed by Bin et al. [6] that uses Pt resistors as the thermosensitive material, Pt is evaporated on the Al layer deposited on the spin-coated PI film, and the Pt layer is patterned as a sensitive the layer is spin-coated and packaged with polyimide material. After hydrochloric acid treatment, a complete flexible temperature sensor is peeled off, which can be used to measure the surface temperature of objects in the biomedical field.

Fabrication method of flexible temperature sensor method of flexible temperature sensor. a Top: Optical images of a 4 × 4 TCR sensor array integrated on a thin elastomeric substrate with magnified views of a single sensor. Bottom: Optical images of a 8 × 8 Si nanomembrane diode sensor array integrated on a thin elastomeric substrate with magnified views of a single sensor [145]. b Schematic process for the fabrication of GNWs/PDMS temperature sensors [86]. c Sketch of the implantable micro temperature sensor on polymer capillary and its application. The head spiral sensing element is fabricated by photolithography [157]. d Schematic for each layer of the e-skin device [132]. e Schematic of the e-skin fabrication process on a PET substrate using a printing method [134]

Compared with other thin-film preparation processes, the chemical vapor deposition method can achieve high-purity and high-quality thin films. It can be structured and controlled at the atomic layer or nanometer level [147–149]. The process of synthesizing GNWs film on copper foil by low-pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technology. Yang et al. [86] developed a flexible temperature sensor based on GNWs/PDMS. The fabricating process is shown in Fig. 6b. They verified GNWs is feasible as an active layer of a temperature sensor, and its thermal response performance exceeds that of a traditional metal temperature sensor. Compared with traditional CVD technology, using PECVD technology [150] under low temperature and low-pressure conditions can effectively improve the deposition rate and film quality. In another study, Zhou et al. used the floating catalyst chemical vapor deposition (FCCVD) method [151] to synthesize the original SWCNT film with a controllable thickness directly. The continuous network of CNTs grown by this method has significant conductivity and a high favorable Seebeck coefficient. After transferring the original SWCNT film to the PET substrate, drop-cast the branched polyetherimide (PEI) ethanol solution, and dry it to obtain an n-type SWCNT film that can be used in the fabricate of flexible thermoelectric modules. Although CVD can achieve the deposition of any material on any substrate, as the demand for simple, low-cost and large-area fabricating nanodevice fabricating technology continues to grow, the fabricating process is complex, high-cost, and toxic CVD growth processes and The time-consuming etching process is being replaced by more suitable flexible electronic device fabricating technology [58].