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Space-Charge-Limited Current (SCLC) Measurement

YY Ye Yan
YL Yadi Liu
QZ Qiang Zhang
YH Yanchun Han
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The mobility is tested by the space-limited charge (SCLC) method. The structures for electron-only and hole-only were ITO/ZnO/active layer/PFN-Br/Ag and ITO/PEDOT:PSS/active layer/MoO3/Ag, respectively. The thickness of the active layers was ~100 nm. The film thermal annealed at 130°C for 10 min. Current–voltage (J–V) characteristics of the SCLC devices were tested by utilizing a Keithley 2400 SMU under dark condition in glove box filling nitrogen. The carrier mobility was extracted according to the equation of Mott–Gurney (Equation 1):

Where J is the current density, ε0 and εr is the free space and relative permittivity, respectively. The μ is the zero-field mobility, V is the effective voltage (V = Vapplied-Vbi-Vseries), and d is the thickness of the film.

Copyright and License information:  ©2020 Yan, Liu, Zhang and Han.
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