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Thin film deposition

YQ Y. Quessab
JX J-W. Xu
CM C. T. Ma
WZ W. Zhou
GR G. A. Riley
JS J. M. Shaw
HN H. T. Nembach
SP S. J. Poon
AK A. D. Kent
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The thin films were prepared by RF magnetron sputtering and deposited onto Si-SiO2 substrates at room temperature with a base pressure of 2.7×10−5 Pa. The Ar deposition pressures of W, Pt, CoGd, and Pt1-xWx were 0.93 Pa, 0.1 Pa, 0.16 Pa, and 0.16 Pa, respectively. CoGd films were obtained by co-sputtering from the Co and Gd targets. The powers of the Co and Gd sources were tuned to obtain CoGd films with approximately 78 at. % of Co. The Pt1-xWx alloy layer was also deposited by co-sputtering from the Pt and W targets. The alloy composition was varied by changing the deposition rate of the Pt and W targets. The deposition rates were calibrated using x-ray reflectometry.

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