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2.5. Hole-Only Device Fabrication and Measurement
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The hole mobility of the active layer was measured from the J–V curves obtained under dark current described in our reported reference using the steady state space-charge-limited-current (SCLC) method [24,76].
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Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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