2.4. I–V Curve Test

The current–voltage (I–V) curve of a semiconductor device contained the electrical information of dark current as well as break-over voltage. The real-time on-line electron-induced current and I–V characteristics can characterize the device to some extent. The I–V curve with voltage range of −100 to 2.5 V before and after irradiation of SiC SBDs had been measured with Keithley 2635 sourcemeter in this work. The damage degree of the device had been determined according to the change of I–V curve before and after irradiation and room-temperature self-healing.