A WSex layer was deposited on WOx by annealing WOx coated silicon-substrate in a selenium environment. Elemental selenium (>99.99%) powder was heated in a tube furnace at ~500 °C for 2 hours. Prior to an annealing treatment, the tube furnace was flushed with high purity argon gas. Selenium (Se) powder was poured in a quartz boat and subsequently heated to 500 °C at a rate of 10 °C/min. The deposited Se layer was characterized using Raman spectroscopy and X-ray diffraction. The layer morphology was evaluated using scanning electron microscopy. The energy dispersive spectroscopy (EDS) was employed for the composition analysis of the layer.
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