Modelling of XPS of hydrosilylated graphene

RP Raffaello Papadakis
HL Hu Li
JB Joakim Bergman
AL Anna Lundstedt
KJ Kjell Jorner
RA Rabia Ayub
SH Soumyajyoti Haldar
BJ Burkhard O. Jahn
AD Aleksandra Denisova
BZ Burkhard Zietz
RL Roland Lindh
BS Biplab Sanyal
HG Helena Grennberg
KL Klaus Leifer
HO Henrik Ottosson
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For the modelling of XPS, we chose a 7 × 7 × 1 graphene supercell with Et3SiH attached onto it, dissociated into a triethylsilyl group and an H atom bonded to opposite sides of the graphene sheet. We have used plane-wave based DFT code VASP66 to optimize the structure. The PBE67 exchange-correlation potential has been used within generalized gradient approximation. The structures were optimized using the conjugate gradient method with forces calculated from the Hellman–Feynman theorem. The energy and the Hellman–Feynman force thresholds are kept at 10−5 eV and 10−2 eV Å−1, respectively. For geometry optimization, a 5 × 5 × 1 Monkhorst–Pack k grid is used. This optimized structure was used to calculate XPS with the DFT using the PAW54-based GPAW55 code. To compute the binding energy measured by XPS, we computed the total energy difference between the ground state and the Si2p core-ionized state.

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