Development of cisplatin‐resistant cell lines

FZ Fuquan Zhang
SD Shanzhou Duan
YT Ying Tsai
PK Peter C. Keng
YC Yongbing Chen
SL Soo Ok Lee
YC Yuhchyau Chen
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Parental A549, H157, and IL‐6 knockdown A549IL‐6si/sc, and H157IL‐6si/sc cells were continuously treated with gradually increased doses of cisplatin for 6 months according to the method described by Barr et al.11 Briefly, cells were treated with 1 μM cisplatin for 72 h and allowed to recover for the following 72 h. After repeating one more cycle at 1 μM cisplatin concentration, the cells were then treated with 2 μM cisplatin in the following two cycles. This procedure was continued with increasing cisplatin concentration up to 30 μM. During the cisplatin‐resistance induction procedure, the IC50 values of every five passage cells were accessed in comparison with those of the parental cells until the IC50 value remained constant. The IC50 values were calculated using GraphPad Prism 5.0 software (San Diego, CA, USA). The cisplatin‐resistant cell lines obtained by this method were maintained in growth media containing 10 μM cisplatin.

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