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Graphene patterning

ZC Zhixin Chen
IG Iain M. Grace
SW Steffen L. Woltering
LC Lina Chen
AG Alex Gee
JB Jonathan Baugh
GB G. Andrew D. Briggs
LB Lapo Bogani
JM Jan A. Mol
CL Colin J. Lambert
HA Harry L. Anderson
JT James O. Thomas
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Poly(methyl methacrylate) (PMMA)-protected chemical-vapour-deposition-grown graphene was wet-transferred to the substrate. The PMMA was removed in warm acetone for 3 h. The graphene tape with a bow-tie-shaped structure was patterned by e-beam lithography with bilayer lift-off resist (PMMA495 and PMMA950) and thermal evaporation of aluminium (50 nm). After lift-off, the graphene on unexposed areas (not covered by aluminium) was etched with oxygen plasma. The aluminium was subsequently removed by aqueous NaOH solution (1.0 g in 50 ml water). The sample was finally immersed in warm acetone overnight to remove any residual PMMA. Scanning electron microscopy images can be found in Supplementary Section 2.

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