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2.1. Materials

GE Georgy A. Ermolaev
KV Kirill V. Voronin
MT Mikhail K. Tatmyshevskiy
AM Arslan B. Mazitov
AS Aleksandr S. Slavich
DY Dmitry I. Yakubovsky
AT Andrey P. Tselin
MM Mikhail S. Mironov
RR Roman I. Romanov
AM Andrey M. Markeev
IK Ivan A. Kruglov
SN Sergey M. Novikov
AV Andrey A. Vyshnevyy
AA Aleksey V. Arsenin
VV Valentyn S. Volkov
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Full area coverage PtS2 and PtSe2 multilayers were purchased from 2d Semiconductors, Inc. (2d Semiconductors Inc., Scottsdale, AZ, USA). The samples were grown on c-cut sapphire substrates by chemical vapor deposition (CVD) using the highest purity (6N) gases (N2/H2) and precursors (S powder and Pt films) in semiconductor-grade facilities with subsequent water-assisted transfer on a 300 nm SiO2/Si substrate.

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