4.4. PCOR-SIMS

PCOR-SIMS (EAG Laboratories) was used to measure the continuous dopant distribution based on matrix composition. This is also called point-by-point-corrected SIMS or PCOR-SIMS. The SIMS measurements were carried out using a Physical Electronics ADEPT-1010 quadrupole setup. ¹⁰B, ¹¹B, and ³⁰Si were monitored under O₂⁺ bombardment, with an impact energy of 650 eV incident at 45°. The analysis chamber was backfilled with a partial pressure of O₂ to decrease ion yield variations at the surface and improve quantification. Secondary ions were collected from the center 10% of a 450 × 450 μ raster area. Stylus profilometry was used to determine the depth of sputtered craters and calibrate the depth scale, assuming a constant sputter rate for the entire profile. Concentrations of ¹⁰B and ¹¹B in the Si were calculated, using the relative sensitivity factor determined from a standard sample. The B profiles were normalized on a point-to-point basis to the ³⁰Si profile before the relative sensitivity factor was applied.