All microwave electrical measurements were carried out at room temperature using a custom-built probe station with the sample mounted at a fixed IP angle on an OOP rotatable sample holder between the pole pieces of an electromagnet producing a uniform magnetic field. A direct positive electric current, Idc, was provided through the dc port of a high-frequency bias-T, and the resulting auto-oscillating signal was then amplified by a low-noise amplifier with a gain of ≥32 dB and subsequently recorded using a spectrum analyzer from Rohde & Schwarz (10 Hz to 40 GHz) comprising a low-resolution bandwidth of 300 kHz. We measured multiple SHNO devices and restricted the maximum current to 1 mA for 150 nm and 2 mA for 200-nm nanoconstriction devices to avoid irreversible changes due to device degradation in the output microwave characteristics.

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