The fabrication procedure of the fully rubbery synaptic transistor involved preparing the AuNPs-AgNWs/PDMS conductor (source and drain electrode), coating P3HT-NFs/PDMS semiconductor, and lastly laminating ion gel dielectric. The source and drain electrodes were prepared in the same manner as described above. The P3HT-NFs/PDMS semiconductor was patterned by spin-coating at 2000 rpm for 60 s through a Kapton shadow mask and dried for 10 min at 90°C. Last, a piece of the ion gel (~150 μm) was laminated on the P3HT-NFs/PDMS film to complete the fully rubbery synaptic transistor.

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