After fabrication, the 3D-SR-BA chips were cleaned with acetone and IPA and N2 blow-dried. A rectangular chamber was prepared by using 10:1 base:curing agent polydimethylsiloxane (PDMS) (Sylgard 184 Silicone Elastomer, Dow Corning), cured overnight at 65°C, cut to the needed dimensions, and positioned on a device chip such that the well surrounds the 3D-SR-BA region. A 1% H2O2 (Sigma-Aldrich, catalog no. 216763) solution in DI water was added to the well for 1 hour up to overnight to dissolve the Ge sacrificial layer and trigger self-rolling. After 3D-SR-BAs conformed in 3D, the solution in the well was exchanged for DI water.

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