Flat samples of ̴(1 × 1 × 0.5) mm were glued to a metallic plate using an H74F epoxy, and a conducting channel to the plate was achieved using an H20E silver conducting epoxy. Identification of epoxy products does not imply recommendation or endorsement by the NIST. An aluminum post was attached to the exposed surface of the sample using an H74F epoxy, oriented along the sample’s (001) plane. The samples were cleaved in situ under ultra-high vacuum by knocking the post off, transferred immediately to the microscope head, and cooled down to ̴8.5 K. PtIr tips were used in all experiments, and prior to each experiment, the tips were prepared on the Cu(111) surface that has been treated to several cycles of sputtering with Ar and annealing before placed in the microscope head to cool. The sample and the Cu(111) were placed inside the microscope head next to each other to minimize exposure and preserve the structural integrity of the tip when moving between the two. STM topographies were taken at a constant current mode, and dI/dV measurements were performed using a lock-in amplifier with a reference frequency set at 0.921 kHz. The data presented in this paper were collected from six successfully cleaved samples equally distributed between the different Th percentage doping (x = 0, x = 0.3%, and x = 0.5%). There were negligible differences measured between different cleaves and different areas on a sample. The error bars correspond to uncertainty of 1 SD.

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