Graphene samples with a carbon buffer layer were epitaxially grown on commercial 6H-SiC substrates. The substrates were hydrogen etched before the growth under argon atmosphere. Details are described by Forti and Starke (47). AFM characterization measurements were taken at the Max Planck Institute in Stuttgart. Adhesion images correspond to the force necessary to retract the tip from the sample. Adhesion is sensitive to the graphene coverage on the sample and can thus distinguish between zero layer, monolayer, and bilayer graphene with sensitivity to grain boundaries.

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