The growth of 4-inch wafer-scale MoS2 MLs was achieved using high-purity gas precursors, Mo(CO)6 (99.9%; Sigma-Aldrich) and (C2H5)2S (98%; Sigma-Aldrich). Four-inch quartz and SiO2/p+-Si wafers were placed in the center of a 6-inch hot-walled quartz tube furnace. Before the MOCVD process, the furnace was purged for 1 hour to eliminate residual contaminants, and the temperature was ramped up to 535°C for 30 min. The growth proceeded for 26 hours with partial pressure of precursors of 4.2 × 10−5 torr for Mo(CO)6 and 10−2 torr for (C2H5)2S. The base pressure of the reactor was ~7 torr under the carrier gas flow of 150 standard cubic centimeters per minute (sccm) for Ar (99.9999%) and 1 sccm for H2 (99.9999%).

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