All experiments were performed in a UHV chamber with a base pressure of 5 × 10−11 mbar equipped with an LT-STM and facilities for tip and sample preparation. The clean W tips were prepared by Ar+ sputtering (2.5 keV) in UHV for 45 min and then heated up by resistive heating (36). All the STM/STS data were measured with both tip and sample at 4.8 K.

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