Electron beam deposit tip was grown on the original tip of a short cantilever (model BL-AC7DS, Olympus, Tokyo, Japan) by focusing the electron beam in an atmosphere of sublimated ferrocene gas using a field-emission scanning electron microscope (model SUPRA 40VP, Carl Zeiss, Jena, Germany) with the following conditions: working distance, 4 nm; beam aperture, 10 μm; deposition time, 20 to 30 s (31). The grown tip was sharpened by etching using a radiofrequency plasma etcher (model PE-2000, South Bay Technology, San Clemente, CA, USA) with the following conditions: gas composition, Ar and O2 in a 1:1 ratio; gas pressure, approximately 180 mtorr; plasma power, 15 W; etching time, approximately 2 min. The resulting tip had a length of 200 to 500 nm and a tip end diameter of 5 to 10 nm.

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