Devices for ST-FMR measurement were fabricated using a two-step method. First, the microstrip with a width of 10 to 30 μm and a length of 40 to 60 μm was patterned. We verified that different dimensions here did not affect the measured SHA. They only affected the resistance of the channel. Most of the data collected in this work were obtained using 30 μm × 50 μm devices. Second, the SiO2 layer on the terminals of the microstrip was removed by etching before depositing the electrodes, which were typically Ti (5 nm)/Cu (100 nm). The electrode was deliberately bent in the clockwise direction, as shown in Figs. 3A and 5A, to match the position of rf probe in our system.

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