Bilayers of Ti (60 nm)/Au (60 nm) deposited by electron beam evaporation and patterned by photolithography and wet etching served as electrical interconnects between the p- and n-type silicon. This process also defined electrode pads for probing. Spin coating another layer of PI (4 μm) and patterning it by exposure to an oxygen plasma through a mask of photoresist (10 μm, AZ 4620, MicroChem) encapsulated the system and completed the fabrication of the 2D thermoelectric precursor. Dissolving the residual photoresist and the underlying PMMA in acetone allowed the precursor to be retrieved onto a piece of water-soluble tape (Aquasol). A pattern of SiOx (50 nm) formed by electron beam evaporation through a shadow mask defined bonding sides on the back side of the precursor. An elastomer substrate (Dragon Skin 10, 1:1, Smooth-On Inc.) stretched to the desired level using a stage served as a substrate for 3D assembly. Exposing the elastomer and the 2D precursor (still on a water-soluble tape) to ultraviolet-induced ozone (Jelight UVO-Cleaner, 144AX) and then laminating to the two together and baking them in a convection oven at 70°C formed strong adhesion via condensation reactions at the bonding site interface. Dissolving in warm water removed the tape. Slowly releasing the strain in the elastomer substrate while immersed in water completed the 3D assembly.

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