The WSe2 monolayers used in this work resemble the growth process described in detail in a previous report (17). However, further optimizations were made, and the WSe2 monolayers were grown predominantly with two conditions. One growth condition was to produce single-crystalline domains ranging from 10 to 100 μm, and another growth condition was used to produce centimeter-scale monolayer WSe2 films. Both growth processes were performed via low-pressure (~3 Torr) CVD, with presence of Ar/H2 as the carrier gas. All WSe2 monolayers studied in the main text were grown on a quartz substrate, except for fig. S3 (on a sapphire substrate). The substrates were previously cleaned by 10 min of sonication in acetone and isopropyl alcohol. The cleaned substrates were loaded into the downstream of the furnace. For the microscale WSe2 samples, a ceramic boat containing a mixture of KBr and WO3 at the weight ratio of 1:2 was placed next to the substrates, with KBr as the promoter similar to the process described in (35). This promoter-to-precursor weight ratio between KBr and WO3 was tuned to optimize the growth. The used weight ratios in the manuscript were 1:2, 1:1, and 2:1. After placing another ceramic boat with Se at the upstream, the heating zones were ramped up to temperatures of 850° and 130°C, respectively, and the synthesis began with presence of H2. The growth was performed for 20 min upon the introduction of H2. For the WSe2 monolayer film, a ceramic boat containing a mixture of KBr and WO3 at the weight ratio of 1:1 was used, and the growth was done for 45 min instead of 20 min.

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