Bulk single crystals of IrTe2 were synthesized using the Te-flux method according to the literature (19). Submicrometer-thick crystals were exfoliated from a bulk single crystal with Scotch tape and transferred onto silicon (Si) or polyethylene naphthalate (PEN) substrates. Gold electrodes were prepared on the substrate and sample surface using photolithography methods. The electrodes on the sample surface were connected with those on the substrate by tungsten deposition using a focused-ion beam to ensure the electrical connection between them. An image of a typical sample is shown in Fig. 2B. The contact resistance depends on the area of the current electrode, and it is typically 1 to 3 ohms for each contact. The sample thickness was measured using scanning electron microscopy.

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