PVA [10 % (w/v)] was spin-coated at 1000 rpm on glass or Si as a sacrificial layer. Parylene diX-SR was deposited as an ultrathin substrate of the device by SCS Labcoater. The honeycomb grid was patterned by photoresist ZPN 1150 with an MA6 mask aligner. The sample was etched using a reactive ion etcher (RIE) for making holes. Then, the remaining photoresist was washed out using acetone. The 70-nm-thick Au for the source and drain electrode was deposited on the honeycomb grid by the lift-off process. Then, 600-nm-thick parylene diX-SR was deposited as a passivation layer. The via-hole was made by photoresist and RIE etching processes. The second layer of 70-nm-thick Au was patterned for interconnection by the lift-off process. Then, RIE was performed for making the contact pad and active channel. For the PEDOT:PSS layer, 20 ml of an aqueous dispersion (Clevios PH 1000) was mixed with 5 weight % (wt %) ethylene glycol and 0.1 wt % dodecyl benzene sulfonic acid additives to enhance the conductivity and film-forming properties. GOPS [(3-glycidyloxypropyl)trimethoxysilane] (1 wt %) (Sigma-Aldrich) was used to cross-link the film for stable operations in aqueous conditions. Furthermore, the active layer of PEDOT:PSS was spin-coated at 2000 rpm. Then, the device was annealed at 140° for 1 hour for cross-linking of PEDOT:PSS. Finally, the channel was patterned using orthogonal resist (OSR 5001) and RIE. The final device was delaminated from the glass by dissolving PVA into the water.

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