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The samples were grown by molecular beam epitaxy on Fe-doped InP (001) substrates, starting with a 60-nm-thick In0.53Ga0.47As buffer layer. Then, a 4.1-μm-thick active region was deposited, and the growth was completed by a 15-nm-thick Si-doped n-type Ga0.53In0.47As contact layer (n = 5.0 × 1018 cm−3). In the active region, the following layer structure (EV2128) was repeated 60 times: in nanometers, 3.0/6.0/0.3/9.3/0.4/8.9/0.4/8.8/0.4/7.7/0.5/6.3/0.8/6.6/1.4/7.5, where Al0.48In0.52As barrier layers are in bold, In0.53Ga0.47As well layers are in roman, and the Si-doped In0.53Ga0.47As layer (n = 4.1 × 1017 cm−3) is underlined. All the layer structures presented here are summarized in table S1. The corresponding conduction band diagram of the one period of the active region with moduli-squared relevant wave functions is also shown in fig. S1.

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