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The QD layer was obtained by Al droplet etching on Al0.4Ga0.6As, followed by deposition of 2-nm GaAs. This technique allows the fabrication of highly symmetric QDs. The QD layer was placed at the center of a λ cavity mode of λ/2-thick (123 nm) layer of Al0.4Ga0.6As sandwiched between two λ/4-thick (60 nm) Al0.2Ga0.8As layers. The cavity sits on top of a DBR made of nine pairs of λ/4-thick Al0.95Ga0.05As (70 nm) and Al0.2Ga0.8As layers and below two pairs of the same material combination. A 4-nm-thick GaAs protective layer completes the structure. The limited number of pairs used for the DBR mirrors does not yield any measurable Purcell enhancement but an increase in light extraction efficiency. Last, a solid immersion lens was placed on top of the grown sample to enhance the external collection efficiency to values up to 12%.

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