The sheet hole concentration (Ps) is evaluated from (46)Embedded Image(2)where VGSi is the intrinsic gate voltage, VT is the threshold voltage extracted from the transfer characteristics, and e is the elementary charge. This calculation yields a sheet hole concentration of 5.1 × 1012 cm−2 and 3.2 × 1012 cm−2, respectively, for diamond:H/H2.3MoO2.5 and diamond:H/MoO3, as presented in Fig. 5B.

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