Diamond:H-based FETs were fabricated following the process outlined in fig. S2. Briefly, after HyMoO3−x and MoO3 ALD, 20-nm Ti/200-nm Au source-drain electrodes were electron-beam–evaporated through a shadow mask. Then, 3-min RTA at 600°C in a nitrogen environment was performed only for the diamond:H/H2.3MoO2.5 sample, followed by the deposition of 20-nm HfO2 by ALD at 250°C as the dielectric layer. Finally, the channel isolation using electron-beam lithography and reactive-ion etching and the subsequent 20-nm Ti/200-nm Au gate deposition through a shadow mask were performed to produce the final FETs.

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