The bottom DBR was first fabricated by an e-beam evaporator, consisting of 20.5 pairs of silicon dioxide (87.5 nm) and tantalum pentoxide (60.2 nm). A thin layer of 65-nm SiO2 was deposited onto the bottom DBR acting as the spacer. The CsPbBr3 microwire was then transferred to the bottom DBR, followed by spin-coating a thin layer of 55-nm PMMA to protect the perovskite. The detailed procedure of the perovskite growth is described in our previous report (37). The substrate was then put into the e-beam evaporator again to complete the fabrication of the top DBR, which consists of 8.5 pairs of silicon dioxide (87.5 nm) and tantalum pentoxide (60.2 nm).

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