Transport measurement and magnetization switching

Transport measurements were conducted using the DC transport option of PPMS (Quantum Design). The procedure of magnetization switching was as follows. (i) The in-plane magnetic field of 3 T was applied for the initialization of the magnetization. (ii) Under a small in-plane magnetic field, a single pulse current with a duration of 1 ms was injected. (iii) The anomalous Hall resistance was measured with low current (1 mA). (iv) Steps (ii) and (iii) were repeated by varying the pulse height of (ii). We used the Keithley model 6221 as the current source and the Keithley model 2182A as the voltmeter. We made the correction of current density by considering the parallel conduction in buffer layers whose resistivity is 2.5 milliohm·cm at 10 K. Because the resistivity of semi-insulating InP substrate was 10 megohm·cm even at room temperature and became completely insulating at low temperature, we did not need to take into account any parallel conduction in the substrate. During the magnetization switching measurement, the sample temperature was kept at 10 K using the cooling system of PPMS.

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