(Ge,Mn)Te films were fabricated with buffer layers GeTe (14 nm)/Sb2Te3 (1 nm) on semi-insulating InP (111) substrates at 200°C by MBE. The epi-ready substrate was annealed at 340°C in vacuum before the epitaxy. The equivalent pressure of beam flux for Ge, Mn, and Te is 4.5 × 10−6 Pa, 5.0 × 10−7 Pa, and 5.0 × 10−5 Pa, respectively. The Mn composition of 9.1 atomic % was evaluated from the inductively coupled plasma mass spectroscopy measurement. The growth rate of (Ge,Mn)Te was approximately 2.5 nm/min. After the thin-film growth, Hall bar devices with 10 μm in both width and length were defined using ultraviolet photolithography and Ar ion milling. The electrodes Au (25 nm)/Ti (5 nm) were formed by electron beam deposition.

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