The MoS2 sheets were grown by metal-organic chemical vapor deposition on 1″ fused silica wafers as described in (26). After initial PL and atomic force microscopy characterizations (fig. S1), we defined Ti/Au (5/50 nm) electrodes and alignment markers using conventional optical lithography and metal evaporation methods. The MoS2 structures (pixels and device channels) were defined by a final optical lithography step followed by reactive ion etching (SF6:O2 5:1 ratio at 20 W). To increase the PL quantum efficiency in our films, we treated our final structures with bis(trifluoromethane) sulfonimide following the procedures detailed in (27).

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