To estimate the location of the two atoms, we extracted the relative capacitive coupling to the different electrodes. The hole temperature of ~300 mK gives kBT >> Γ for the acceptor-lead tunnel rate, thereby justifying a thermally broadened fit (25). The reflectometry linewidth shows a relative coupling to the top gate (αTG) and drain (αD) of 0.50 ± 0.01 eV/V and 0.41 ± 0.02 eV/V, respectively, thereby placing this atom roughly halfway between these two electrodes, under the Si3N4 spacer. This relatively weak coupling to the top gate supports our identification of the acceptor atom, as gate-induced quantum dots are known to have gate couplings above ~0.7 eV/V (24, 27). The second boron atom has to be located closer to the center of the channel, as the tunneling to both electrodes is too slow to be detected.

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