We synthesized the MQD InP/InAs heterostructure nanowires in a MOVPE system. Indium particles were formed on InP substrate by introducing TMIn source material for 15 min at a flow rate of 3.0 μmol/min and temperature of 360°C, as we have shown before (38, 50). The temperature was then reduced to the growth temperature (350°C), and growth was initiated by introducing TMIn and TBA or tertiarybutylphosphine (TBP) simultaneously. For the InP segment growth, the flow rates of TMIn and TBP were 2.12 to 3.03 μmol/min and 803.6 μmol/min, respectively. For MQD nanowires, the growth times for the InP and InAs segments were 10 and 0.3 s, respectively.

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