The STM/STS experiments were carried out in UHV environment. Bi2O2Se single crystals were glued onto highly doped silicon wafers and cleaved in situ at room temperature. Cleaved samples were transferred to a cryogenic stage kept at 77 K for STM/STS experiments. Chemically etched tungsten (W) tips were used for both imaging and tunneling spectroscopy. The tungsten tip was calibrated with the surface states of silver islands on Si(111)–7 × 7. Lock-in technique was used to obtain dI/dV curves. A 5-mV modulation signal at 991 Hz was applied to the sample together with the DC sample bias.

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