ADFMR devices were fabricated on commercially available Y-cut LiNbO3 wafers (MTI Corp) via standard I-line photolithography. IDT patterning was first performed on 4″ wafers using a GCA 8500 wafer stepper. After development, a low-power oxygen plasma treatment was performed using a Technics C Plasma Etching System to remove the remaining photoresist in the developed regions. Al contacts (100 nm) were deposited using a Technical Engineering Services thermal evaporator. The wafers were then diced into 8 mm × 8 mm chips using a Disco DAD3240 dicing saw, and second-layer photolithography with alignment was performed using a Canon 4X projection mask aligner. Following a second low-power oxygen plasma treatment, the nickel and cobalt films were deposited using a custom AJA e-beam evaporator and a custom AJA sputtering system, respectively. Commercial nanodiamonds containing NV centers (Adamas Nanotechnologies) were deposited by hand using laser-pulled glass pipettes at multiple locations on top of the ferromagnetic pad.

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